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CY20AAJ-8H
Nch IGBT for Strobe Flasher
REJ03G0282-0100 Rev.1.00 Aug.20.2004
Features
* * * * VCES : 400 V ICM : 130 A Drive voltage : 4 V High speed switching
Outline
SOP-8
5 8 4 1 1,2,3 4 5,6,7,8
1,2,3 : Emitter 4 : Gate 5,6,7,8 : Collector
Applications
Strobe flasher for cameras
Maximum Ratings
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 6 8 130 - 40 to +150 - 40 to +150 Unit V V V A C C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 F (see performance curve)
Rev.1.00, Aug.20.2004, page 1 of 4
CY20AAJ-8H
Electrical Characteristics
(Tch = 25C)
Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Fall time Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) tf Min. 450 -- -- 0.5 -- -- Typ. -- -- -- 0.8 4 0.5 Max. -- 10 10 1.5 8 -- Unit V A A V V s Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = 6 V, VCE = 0 V VCE = 10 V, IC = 1 mA VCE = 4 V, IC = 130 A IC = 20 A, VCC = 300 V, Resistive loads VGE = 5 V, RG = 30
Performance Curves
Maximum Pulse Collector Current (Conductive Capability in Strobe Flasher Applications)
160
Pulse Collector Current ICM (A)
C CM F RG = 30
120
80
40
0
0
2
4
6
8
Gate-Emitter Voltage VGE (V)
Rev.1.00, Aug.20.2004, page 2 of 4
CY20AAJ-8H
Application Example
IXe
Vtrig
CM + -
Trigger Signal
Vtrig
VCM
RG
VCE
30
VG IGBT
IGBT Gate Voltage
VG
Xe Tube Current IXe
VCM ICP CM VGE
Recommended Operation Conditions 330 V 120 A 330 F 5V
Maximum Operation Conditions 350 V 130 A 400 F --
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 , it is satisfied.) 3. The operation life should be endured 5,000 shots under the charge current (IXe 130 A : full luminescence condition) of main capacitor (CM = 400 F) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4
CY20AAJ-8H
Package Dimensions
8P2S-B(SOP-8)
EIAJ Package Code JEDEC Code
Conforms
Mass (g) (reference value)
0.07
Lead Material
Cu alloy
6.0
4.4
A
1.8 max
Detail A
1.5 0.10.1 0.05 or then 10max
0.9
0.15 5.0
0.4
Symbol A A1 A2 b D E e x y y1 ZD ZE
Dimension in Millimeters Min Typ Max
0.4 0.1 1.27 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example CY20AAJ-8H-T13 CY20AAJ-8H
Surface-mounted type Taping 3000 Type name - T +Direction (1 or 2)+3 Surface-mounted type Plastic Magazine (Tube) 100 Type name Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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